? semiconductor components industries, llc, 2008 february, 2008 - rev. 1 1 publication order number: btb08-600bw3/d btb08-600bw3g, BTB08-800BW3G triacs silicon bidirectional thyristors designed for high performance full\wave ac control applications where high noise immunity and high commutating di/dt are required. features ? blocking voltage to 800 v ? on\state current rating of 8 amperes rms at 25 c ? uniform gate trigger currents in three quadrants ? high immunity to dv/dt - 2000 v/ s minimum at 125 c ? minimizes snubber networks for protection ? industry standard to\220ab package ? high commutating di/dt - 4 a/ms minimum at 125 c ? these are pb-free devices maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive off-state voltage (note 1) (t j = -40 to 125 c, sine wave, 50 to 60 hz, gate open) btb08-600bw3g BTB08-800BW3G v drm, v rrm 600 800 v on\state rms current (full cycle sine wave, 60 hz, t c = 80 c) i t(rms) 8.0 a peak non\repetitive surge current (one full cycle sine wave, 60 hz, t c = 25 c) i tsm 90 a circuit fusing consideration (t = 10 ms) i 2 t 36 a 2 sec non-repetitive surge peak off-state voltage (t j = 25 c, t = 10ms) v dsm/ v rsm v dsm/ v rsm +100 v peak gate current (t j = 125 c, t = 20ms) i gm 4.0 a peak gate power (pulse width 1.0 s, t c = 80 c) p gm 20 w average gate power (t j = 125 c) p g(av) 1.0 w operating junction temperature range t j -40 to +125 c storage temperature range t stg -40 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. v drm and v rrm for all types can be applied on a continuous basis. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. triacs 8 amperes rms 600 thru 800 volts to-220ab case 221a style 4 1 http://onsemi.com btb08-xbwg ayww marking diagram x = 6 or 8 a = assembly location y = year ww = work week g = pb-free package 2 3 device package shipping ordering information btb08-600bw3g to-220ab (pb-free) 50 units / rail pin assignment 1 2 3 gate main terminal 1 main terminal 2 4 main terminal 2 mt1 g mt2 BTB08-800BW3G to-220ab (pb-free) 50 units / rail *for additional information on our pb-free strategy and soldering details, please download the on semicon\ ductor soldering and mounting t echniques reference manual, solderrm/d. 4
btb08-600bw3g, BTB08-800BW3G http://onsemi.com 2 thermal characteristics characteristic symbol value unit thermal resistance, junction-to-case junction-to-ambient r jc r ja 2.5 60 c/w maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 c electrical characteristics (t j = 25 c unless otherwise noted; electricals apply in both directions) characteristic symbol min typ max unit off characteristics peak repetitive blocking current (v d = rated v drm , v rrm ; gate open) t j = 25 c t j = 125 c i drm / i rrm - - - - 0.005 1.0 ma on characteristics peak on\state voltage (note 2) (i tm = 11 a peak) v tm - - 1.55 v gate trigger current (continuous dc) (v d = 12 v, r l = 30 ) mt2(+), g(+) mt2(+), g(-) mt2(-), g(-) i gt 2.5 2.5 2.5 - - - 50 50 50 ma holding current (v d = 12 v, gate open, initiating current = 100 ma) i h - - 50 ma latching current (v d = 24 v, i g = 60 ma) mt2(+), g(+) mt2(+), g(-) mt2(-), g(-) i l - - - - - - 70 90 70 ma gate trigger voltage (v d = 12 v, r l = 30 ) mt2(+), g(+) mt2(+), g(-) mt2(-), g(-) v gt 0.5 0.5 0.5 - - - 1.7 1.1 1.1 v gate non-trigger voltage (t j = 125 c) mt2(+), g(+) mt2(+), g(-) mt2(-), g(-) v gd 0.2 0.2 0.2 - - - - - - v dynamic characteristics rate of change of commutating current, see figure 10. (gate open, t j = 125 c, no snubber) (di/dt) c 4.0 - - a/ms critical rate of rise of on-state current (t j = 125 c, f = 120 hz, i g = 2 x i gt , tr 100 ns) di/dt - - 50 a/ s critical rate of rise of off\state voltage (v d = 0.66 x v drm , exponential waveform, gate open, t j = 125 c) dv/dt 2000 - - v/ s 2. indicates pulse test: pulse width 2.0 ms, duty cycle 2%.
btb08-600bw3g, BTB08-800BW3G http://onsemi.com 3 + current + voltage v tm i h symbol parameter v drm peak repetitive forward off state voltage i drm peak forward blocking current v rrm peak repetitive reverse off state voltage i rrm peak reverse blocking current voltage current characteristic of triacs (bidirectional device) i drm at v drm on state off state i rrm at v rrm quadrant 1 mainterminal 2 + quadrant 3 mainterminal 2 - v tm i h v tm maximum on state voltage i h holding current mt1 (+) i gt gate (+) mt2 ref mt1 (-) i gt gate (+) mt2 ref mt1 (+) i gt gate (-) mt2 ref mt1 (-) i gt gate (-) mt2 ref - mt2 negative (negative half cycle) mt2 positive (positive half cycle) + quadrant iii quadrant iv quadrant ii quadrant i quadrant definitions for a triac i gt - + i gt all polarities are referenced to mt1. with in-phase signals (using standard ac lines) quadrants i and iii are used.
btb08-600bw3g, BTB08-800BW3G http://onsemi.com 4 figure 1. rms current derating i t(rms) , rms on\state current (amp) 125 120 115 110 105 100 8 7 6 5 4 3 2 1 0 t c , case temperature ( c) figure 2. on\state power dissipation i t(rms) , on\state current (amp) 8 7 6 5 4 3 2 1 0 12 10 8 6 4 2 p av , average power (watts) 0 = 120, 90, 60, 30 = 180 = 30 dc dc 180 120 90 60 figure 3. on\state characteristics v t , instantaneous on\state voltage (volts) 100 0 i t , instantaneous on\state current (amp) 0.5 1 1.5 2 2.5 3 3.5 4 10 1 0.1 maximum @ t j = 125 c typical at t j = 25 c maximum @ t j = 25 c figure 4. thermal response t, time (ms) r(t), transient thermal resistance (normalized) 1 0.1 0.01 110 4 1000 100 10 1 0.1 figure 5. typical hold current variation t j , junction temperature ( c) i h , hold current (ma) 5 10 15 20 25 30 35 40 45 50 -40 -25 -10 5 20 35 50 65 80 95 110 125 mti2 positive mti2 negative
btb08-600bw3g, BTB08-800BW3G http://onsemi.com 5 1 10 100 -40 -25 -10 5 20 35 50 65 80 95 110 125 figure 6. typical gate trigger current variation t j , junction temperature ( c) v d = 12 v r l = 30 i gt , gate trigger voltage (ma) q1 q3 q2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -40 -25 -10 5 20 35 50 65 80 95 110 125 t j , junction temperature ( c) figure 7. typical gate trigger voltage variation v gt , gate trigger voltage (v) v d = 12 v r l = 30 q3 q1 q2 figure 8. critical rate of rise of off\state voltage (exponential waveform) r g , gate to main terminal 1 resistance (ohms) 5000 4k 3k 2k 1k 0 10000 1000 100 10 dv/dt , critical rate of rise of off\state voltage (v/ s) v d = 800 vpk t j = 125 c figure 9. simplified test circuit to measure the critical rate of rise of commutating current (di/dt) c l l 1n4007 200 v + measure i - charge control charge trigger non\polar c l 51 mt2 mt1 1n914 g trigger control 200 v rms adjust for i tm , 60 hz v ac note: component values are for verification of rated (di/dt) c . see an1048 for additional information.
btb08-600bw3g, BTB08-800BW3G http://onsemi.com 6 package dimensions style 4: pin 1. main terminal 1 2. main terminal 2 3. gate 4. main terminal 2 to-220 case 221a-07 issue aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.022 0.36 0.55 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 a k l v g d n z h q f b 123 4 -t- seating plane s r j u t c on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. typical parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including typicals must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800-282-9855 toll free ?usa/canada europe, middle east and africa technical support: ?phone: 421 33 790 2910 japan customer focus center ?phone: 81-3-5773-3850 btb08-600bw3/d literature fulfillment : ?literature distribution center for on semiconductor ?p.o. box 5163, denver, colorado 80217 usa ? phone : 303-675-2175 or 800-344-3860 toll free usa/canada ? fax : 303-675-2176 or 800-344-3867 toll free usa/canada ? email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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